Apparatus and methods for determining horizontal position of substrate using lasers

ABSTRACT

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

BACKGROUND

Recent advances in semiconductor fabrication and processing has led toincreased use of electroplating to deposit a variety of materials onsemiconductor devices. Such materials include electroplated copper,nickel, and tin-silver alloys. In electroplating, the substrate isplaced in the cup of a substrate holder assembly (implemented as aclamshell assembly).

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1A is a schematic view of an electrochemical plating apparatusincluding a wafer.

FIG. 1B is a schematic view of a processing system including theelectrochemical plating apparatus of FIG. 1A.

FIG. 2. illustrates a cross-sectional schematic of the substrate holderincluding the cone and the cup.

FIG. 3 is a schematic plan view of the lower surface of the coneincluding a plurality of distance measuring devices, according toembodiments of the disclosure.

FIG. 4 illustrates the setup with the substrate placed in the cup andthe cone positioned over the cup prior to closing the clamshell.

FIGS. 5A and 5B show a data analyzing apparatus according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

In order to increase signal speed performance in integrated circuits,copper, gold and silver or alloys thereof are being used with increasingfrequency for interconnects because of their lower resistance comparedto, for example, aluminum. In addition to possessing lower resistancecompared to aluminum, copper possesses superior migration and exhibitshigher reliability. The techniques used to achieve copper metallizationinclude CVD, selective electroless deposition, sputtering (PVD) andelectro-chemical plating.

Semiconductor device fabrication is a multiple-step sequence of photolithographic and chemical processing steps during which electroniccircuits are gradually created on a wafer made of pure semiconductingmaterial. Among semiconductor fabrication processes, layer depositionprocesses are utilized to form IC components. One of the employed layerdeposition process is an electrochemical plating (ECP) process, whichdeposits a layer of conductive material (e.g., gold, zinc nickel,silver, copper or nickel) onto a substrate (e.g., semiconductor wafer)by electrolytic deposition. In electrochemical plating (ECP) processes,a substrate is submerged into an plating solution comprising ions of amaterial to be deposited. A DC voltage is applied to the substrate,causing it to act as a cathode which attracts cations of the platingsolution, which are reduced and accumulated over the substrate to form athin film onto the substrate.

The electrochemical deposition of copper (or any other conductivematerial to be deposited) is caused by the passage of electrical currentbetween two electrodes through a copper sulfate solution or other coppercontaining electrolytes. The electrical current to the electrode iselectronic, while the current in the electrolyte is ionic. At thecathode, electrochemical reduction occurs, while electrochemicaloxidation occurs at the anode which is made of the conductive material(copper, in this case) that is to be deposited/plated onto thesubstrate. In this arrangement, copper ions removed at the cathode arereplaced by copper ions produced at the anode. Copper ions aretransported to the cathode by electrical drift, diffusion andconvection. The required voltage necessary to pass a certain current isthe sum of ohmic drop in the electrolyte, the surface over potentialacross the double layer and the concentration over potential associatedwith the diffusion layer. Electro-chemical plating can be carried out atconstant current, constant voltage or variable forms of current orvoltage. The distribution of current, and hence the distribution of thethickness of the copper layer across the cathode depends on itsgeometry, the kinetics of the electrochemical reaction and concentrationvariations, as determined by the hydrodynamics and the convective masstransport in the electrolyte.

In the case of copper electro-chemical plating on silicon wafer, theSiO₂-covered wafer is at least partially coated with a thin conductivelayer of copper, normally referred to as a seed layer, in order toassure electronic conductivity. The wafer is exposed to an electrolytecontaining copper ions and electrical contact is established between theseed layer and the power supply by several contact points along theperiphery of the wafer. Constant current is passed for a certain lengthof time, resulting in a corresponding thickness of copper layer.

FIG. 1A is a schematic view of an electrochemical plating apparatus 30including a substrate 38. The electrochemical plating apparatus 30includes a substrate holder 32 mounted on a rotatable spindle 40 whichallows rotation of the substrate holder 32. The substrate holder 32includes a cone 34, a cup 36 and a flange 48, and apertures 50. Beforethe electrochemical plating process starts, the substrate 38 is mountedin the cup 36. The substrate holder 32 and the substrate 38 are thenplaced into an electroplating cell 42 that serves as a container/vesselfor containing a plating solution 31, e.g., a copper sulfate (CuSO₄)solution. As indicated by arrow 46, the plating solution 31 iscontinually provided to the electroplating cell 42 by a pump 44. Theplating solution 31 flows upwards towards the substrate 38 and thenradially outward and across the substrate 38 and then flow through theapertures 50 as indicated by arrows 52. By directing the platingsolution 31 towards the substrate 38 (e.g., towards the center of thesubstrate 38), any gas bubbles entrapped on the substrate 38 are removedthrough the apertures 50. In some embodiments, the plating solution 31overflows from the electroplating cell 42 to an overflow reservoir 56 asindicated by arrows 54. The plating solution 31 is then filtered andreturned to pump 44 as indicated by arrow 58 completing a recirculationof the plating solution 31.

The plating solution 31 may include a mixture of copper salt, acid,water and various organic and inorganic additives that improve theproperties of the deposited copper. Suitable copper salts for theplating solution 31 include comprise copper sulfate, copper cyanide,copper sulfamate, copper chloride, copper formate, copper fluoride,copper nitrate, copper oxide, copper fluorine-borate, coppertrifluoroacetate, copper pyrophosphate and copper methane sulfonate, orhydrates of any of the foregoing compounds. The concentration of thecopper salt used in the plating solution will vary depending on theparticular copper salt used. Various acids can be used in the platingsolution 31 , comprising: sulfuric acid, methanesulfonic acid,fluoroboric acid, hydrochloric acid, hydroiodic acid, nitric acid,phosphoric acid and other suitable acids. The concentration of the acidused will vary depending on the particular acid used in the platingsolution 31. Common additives for copper plating solution includebrighteners, suppressors and levelers. Brighteners are organic moleculesthat tend to improve the specularity (or reflectivity) of the copperdeposit by reducing both surface roughness and grain-size variation.Suitable brighteners include, for example, organic sulfide compound,such as bis-(sodium sulfopropyl)-disulfide, 3-mercapto-1-propanesulfonicacid sodium salt, N-dimethyl-dithiocarbamyl propylsulfonic acid sodiumsalt and 3-S-isothiuronium propyl sulfonate, or mixtures of any of theforegoing compounds. Suppressors are macromolecule deposition inhibitorsthat tend to adsorb over the surface of the substrate and reduce localdeposition rates, increasing the deposition uniformity. Levelers usuallyhave ingredients with nitrogen functional group and may be added to theplating solution at a relatively low concentration. Traditional levelinginvolves the diffusion or migration of strongly current suppressingspecies to corners or edges of macroscopic objects which otherwise platemore rapidly than desired due to electric field and solution masstransfer effects. The levelers may be selected from the followingagents: a polyether surfactant, a non-ionic surfactant, a cationicsurfactant, an anionic surfactant, a block copolymer surfactant, apolyethylene glycol surfactant, polyacrylic acid, a polyamine,aminocarboxylic acid, hydrocarboxylic acid, citric acid, entprol, edeticacid, tartaric acid, a quaternized polyamine, a polyacrylamide, across-linked polyamide, a phenazine azo-dye, an alkoxylated aminesurfactant, polymer pyridine derivatives, polyethyleneimine,polyethyleneimine ethanol, a polymer of imidazoline andepichlorohydrine, benzylated polyamine polymer.

The substrate 38 and an anode 62 are both immersed in the platingsolution 31 (CuSO₄ solution) containing one or more dissolved metalsalts as well as other ions that permit the flow of electricity. Thesubstrate 38 acts as a cathode onto which material is deposited derivedfrom the anode 62 disposed within the electroplating cell 42. A DC powersupply 60 has a negative output lead 210 electrically connected to thesubstrate 38 through one or more slip rings, brushes and contacts (notshown). The positive output lead 212 of the power supply 60 iselectrically connected to the anode 62. During use, power supply 60biases the substrate 38 to have a negative potential relative to theanode 62 causing an electrical current to flow from the anode 62 to thesubstrate 38. (As used herein, electrical current flows in the samedirection as the net positive ion flux and opposite the net electronflux.) This causes an electrochemical reaction (e.g. Cu⁺⁺+2e⁻=Cu) on thesubstrate 38 which results in the deposition of the electricallyconductive layer (e.g. copper, in this case) on the substrate 38. Theion concentration of the plating solution is replenished during theplating cycle by dissolving anode 62 which comprises, for example, ametallic compound (e.g. Cu═Cu⁺⁺+2e⁻).

FIG. 1B is a schematic view of a processing system 400 that may beutilized with the electrochemical plating apparatus 30 in FIG. 1A tobring the substrate 38 into contact with the plating solution 31.Referring to FIG. 1B, with continued reference to FIG. 1A, theelectroplating cell 42 holds the plating solution 31 and the substrate38 is immersed into the plating solution 31. As such, the electroplatingcell 42 is sized based at least in part upon the size of the substrate38 that will be processed.

In order to maintain circulation (represented the curved arrows labeled63) within the electroplating cell 42, which circulation helps to mixthe plating solution 31 and aid in the replenishment of the platingsolution 31 adjacent to the surface of the substrate 38, theelectroplating cell 42 may additionally have an overflow reservoir 56.The overflow reservoir 56 is positioned to receive the plating solution31 after the plating solution 31 has entered the electroplating cell 42(e.g., through an entry port 107 at the bottom of the electroplatingcell 42) and has circulated through the electroplating cell 42 beforeentering the overflow reservoir 56. As such, the overflow reservoir 56may be a weir located adjacent to a top of the electroplating cell 42 sothat plating solution 31 can enter the bottom of the electroplating cell42, circulate around the electroplating cell 42, and make its way upthrough the electroplating cell 42 before overflowing a side of theelectroplating cell 42 and entering the overflow reservoir 56.

The overflow reservoir 56 is connected to the recirculation line 55. Therecirculation line 55 receives the plating solution 31 from the overflowreservoir 56 and recirculates the plating solution 31 from the overflowreservoir 56 back to the electroplating cell 42. The recirculation line55 has a first pump 109 that is utilized to pump the plating solution 31back into the electroplating cell 42 through, e.g., the entry port 107.The first pump 109 also helps to provide the forces that aid in themixing of the plating solution 31 within the electroplating cell 42.

The recirculation line 55 may also comprise a filter 111. The filter 111is used to remove particulate materials and other impurities from theplating solution 31 as the plating solution 31 recirculates within theprocessing system 400. These impurities may include silicate,aggregation surfactant, the oil drop by-products of the plating solution31, and other particles that may form during the processing reactions orelse otherwise be in the plating solution 31. The filter 111 may besized, for example, to capture the impurities such as the silicate, theaggregation surfactant, and the oil drop by-products and, as such, maybe dependent at least in part upon the size of these impurities.

The recirculation line 55, first pump 109, and filter 111 provides adesired recirculation rate of the plating solution 31 to theelectroplating cell 42. This recirculation rate may be used to ensurethat the plating solution 31 is properly mixed so that variations ofconcentrations (that result from the chemical reactions) at differentpoints within the plating solution 31 are kept at a minimum.

As the process continues, the reactants within the plating solution 31(e.g., the strong base, the surfactant, and the oxidant) will react andtheir concentrations will reduce while concentrations of by-products ofthe reactions (such as silicate) will increase, thereby changing thevarious rates of reaction and introducing undesired complexities inattempts to control the processing process. In order to reduce theeffects of this reduction, a replenishment system 120 is utilized tomonitor the concentrations of the individual components and, ifnecessary, to replenish the individual components within the platingsolution 31 in order to maintain better control over the processingprocess. In an embodiment, the replenishment system 120 includes amonitoring system 121 and a controller 500.

The monitoring system 121 is connected to the recirculation line 55 witha bypass line 125 connected between the first pump 109 and the filter111. To obtain samples of the plating solution 31, a first valve 127 isinstalled in the bypass line 125 and utilized to remove samples of theplating solution 31 from the recirculation line 55 for analysis. Thefirst valve 127 receives a signal from the controller 500 to open andtake a sample at regular intervals.

To obtain the desired cooling, a cooler 129 is, e.g., a continuous flowheat exchanger with a cooling medium such as cooling water in order toget the samples of the plating solution 31 to a constant temperature.Alternatively, the cooler 129 is an active cooling unit, e.g., arefrigeration unit to provide the desired cooling to the samples of theplating solution 31. Any suitable system and method of reducing thetemperature of the sample of the plating solution 31 and maintaining thetemperature of the samples of the plating solution 31 is utilized,without departing from the scope of the embodiments.

Once the samples of the plating solution 31 have been cooled down to theappropriate temperature, the samples of the plating solution 31 can beanalyzed by a measurement unit 131. The measurement unit 131 includesone or more analysis units, with each of the analysis units utilized tomeasure one or more components of the plating solution 31. For example,a first analysis unit 117 may analyze the concentration of the oxidant,a second analysis unit 119 may analyze a concentration of thesurfactant, and a third analysis unit 151 may analyze a concentration ofthe strong base.

The first analysis unit 117 used to measure the oxidant within thesamples of the plating solution 31 further includes multiple measuringunits, with each one of the individual different measuring unitsmeasuring different ranges of concentrations that the oxidant is at. Forexample, for measuring relatively higher concentrations of the oxidant,the first analysis unit 117 includes an intensity unit 153 thatmeasures, e.g., an oxidation-reduction potential (ORP) of the samples ofthe plating solution 31. Alternatively, the intensity unit 153 is a pHmeasurement unit, which measures the pH of the samples of the platingsolution 31. Either type of intensity unit 153 (e.g., that measureseither ORP or pH) and any other suitable type of measuring unit thatprovides a suitable concentration of the oxidant within the platingsolution 31 is utilized, and all such types are fully intended to beincluded within the scope of the embodiments.

In addition, for measurements that are desired below the sensitivitylevels of the intensity unit 153 (e.g., below 100 ppm), the firstanalysis unit 117 also includes a spectrum analysis unit 155. Thespectrum analysis unit 155 is an optical spectrum analysis unit, inwhich the sample of the plating solution 31 is irradiated withultraviolet (UV) light, near-infra red (NIR) light, or infra-red (IR)light, and a resulting absorption spectrum is analyzed to determine theconcentration of the oxidant within the samples of the plating solution31.

The spectrum analysis unit 155 measures the concentration of othercomponents that are within the plating solution 31. For example, thespectrum analysis unit 155 measures the concentration of reactionby-products, such as silicate, that is within the plating solution 31.This and any other analysis for which the spectrum analysis unit 155 issuitable are also utilized to provide information on the platingsolution 31.

The second analysis unit 119 measures the concentration of thesurfactant within the samples of the plating solution 31. The secondanalysis unit 119 is a spectrum analysis unit, and is an opticalspectrum analysis unit, in which the samples of the plating solution 31are irradiated with, e.g., ultraviolet (UV) light and a resultingabsorption spectrum is analyzed to determine the concentration of thesurfactant within the samples of the plating solution 31. In someembodiments, the second analysis unit 119 is the spectrum analysis unit155 as described above with respect to the first analysis unit 117,although the second analysis unit 119 may have a separate spectrumanalysis unit. Additionally, any suitable analysis unit mayalternatively be utilized to measure the concentration of the surfactantwithin the samples of the plating solution 31.

The third analysis unit 151 measures the concentration of the strongbase within the samples of the plating solution 31. In some embodimentswhen the strong base is KOH, the third analysis unit 151 is a pH meterto determine the concentration of KOH in the plating solution 31.However, any other suitable measurement system, such as a refractometer,may alternatively be utilized to measure the concentration of the strongbase within the plating solution 31.

FIG. 2 illustrates a cross-sectional schematic of the substrate holder32 including the cone 34 and the cup 36. The cup 36 is supported by topplate 205 using struts 204. Generally, the cup 36 provides a supportupon which substrate 38 rests. The cup 36 includes an opening throughwhich plating solution 31 contacts the substrate 38 positioned at theopening. Note that substrate 38 has a front/working side 33, on whichthe plating occurs. The periphery of substrate 38 rests on a sealingelement 203 (e.g., an O-ring, a lip seal, etc.) positioned on the bottomportion of the cup 36. One or more snubbers 207 (e.g., mechanicalsnubbers) also located on the bottom portion of the cup 36 limit themovement of the substrate 38 due to, for example, the movement of theplating solution 31, during submersion of the substrate holder 32 intothe plating solution 31 and/or during the plating process

Referring to FIG. 2, the substrate 38 is loaded into the substrateholder 32 by lifting cone 34 from its depicted position via spindle 206.When cone 34 is lifted, a gap is created between cup 36 and cone 34 intowhich substrate 38 can be inserted. As discussed below, the substrate 38is inserted into the substrate holder 32 using robotic arms. The cone 34is then lowered to engage substrate 38 against the periphery of cup 36or, more specifically, against the snubbers 207 and the sealing element203.

The spindle 206 is used to rotate the substrate holder 32 and thesubstrate 38 during electroplating, drying, and other operations. Thesealing element 203 forms a fluid tight seal that limits the platingsolution 31 (see, FIGS. 1A and 1B) from contacting the backside ofsubstrate 38 (where the plating solution could introduce contaminatingmetal atoms onto/into the silicon substrate) and from reaching othercomponents of substrate holder 32. The cone 34 also includes sealingelements 209 located near the outer edge of cone 34 and an upper regionof the cup 36 when engaged. This arrangement also protects the backsideof substrate 38 from plating solution 31 that might enter the clamshellfrom above the cup 36. The sealing elements 209 may be affixed to thecone 34 or the cup 36, and may be a single sealing element or amulti-component sealing element. Upon initiation of plating, substrate38 is introduced to cup 36 when cone 34 is raised above cup 36. When thesubstrate is initially introduced into cup 36, typically by a roboticarm, its front side 33 rests on sealing element 203. During plating, thesubstrate holder 32 rotates in order to achieve uniform plating.

As mentioned above, the substrate 38 is provided to the wafer engagingcomponents, also referred to as “clamshell” components. The clamshellincludes the cup 36 and the cone 34 that is disposed on the cup 36.Substrates that are to be processed are generally provided to theplating apparatus via robots (e.g., front end and back end robots) andinserted into the clamshell of the plating apparatus using robots aswell. It is required that the substrate is positioned substantiallyhorizontal (e.g., angled+/−5° (or less) to the ideal horizontal axis)when placed in the cup. One way of ensuring this is by visual inspectionby the operator. However, it is difficult to determine whether thesubstrate is substantially horizontal by visual inspection since changesin inclination of the substrate are not readily apparent to the humaneye. An incorrectly positioned substrate may cause improper sealingbetween the sealing element and the substrate. The improper sealing maycause the plating solution to flow across the sealing element andcontact the back side of substrate. It is therefore desirable to ensuresubstantial horizontal placement of the substrate with a high level ofaccuracy. As used herein, inclination of the substrate, or equivalentsthereof, refers to the angle between the substrate and the idealhorizontal axis (X-axis), which is equivalent to the surface of theplating solution in a static state.

According to embodiments, an optical measurement technique using, forexample, lasers, is used to determine whether the substrate is placedsubstantially horizontal in the cup. The lasers are produced by aplurality of distance measuring devices placed underneath the cone, forexample, on the lower surface of the cone facing the cup. Each distancemeasuring device generates laser pulses that are bounced off the backside (top surface) of substrate. The turnaround time (TAT) required foreach laser pulse to return to the corresponding generator is measured.The turnaround time is measured from the time the laser pulse is emittedfrom the generator to the time the pulse is detected back at thegenerator after reflecting from the substrate, more specifically, fromthe back side of the substrate. The distance between the distancemeasuring device and the back side of the substrate is obtained from theturnaround time. The turnaround time is measured for laser pulsesgenerated by each distance measuring device and the correspondingdistances between each distance measuring device and the back side ofthe substrate are obtained. If the distances are within a desiredproximity of each other, it is determined that the substrate ispositioned substantially horizontal in the cup. If the distances are notwithin the desired proximity, then it is determined that the substrateis placed inclined in the cup. The substrate is then repositioned. Arobotic arm will reengage the substrate, lift the substrate, and placeit again in the cup. The distances are measured again until a desiredproximity is obtained, thereby indicating that the substrate ispositioned substantially horizontal in the cup. Although embodiments aredirected to ensuring that the substrate is placed substantiallyhorizontal in the cup, embodiments are not limited in this regard.Embodiments of the disclosure can equally be used to determine if thesubstrate has been placed with a desired inclination (not substantiallyhorizontal) in the cup, without departing from the spirit and scope ofthe disclosure.

FIG. 3 is a schematic plan view of the lower surface of the cone 34including a plurality of distance measuring devices 302-1, 302-2, 302-3,and 302-4 (collectively referred to distance measuring devices 302),according to embodiments of the disclosure. As illustrated, theplurality of distance measuring devices 302 are positioned at a 90°angular separation from each other. The plurality of distance measuringdevices 302 are positioned in an area on the lower surface 39 of thecone 34 that is directly above the substrate 38 when the substrate 38 isplaced in the cup 36 and the cone 34 is closed. Although FIG. 3illustrates 4 distance measuring devices 302, the number of distancemeasuring devices is not limited in this regard. Similarly, thearrangement of the distance measuring devices 302 is not limited to thearrangement illustrated in FIG. 3. The cone 34 can include threedistance measuring devices or more than 4 distance measuring devicespositioned in any desired configuration on the lower surface 39 providedthe laser pulses from these distance measuring device are emittedsubstantially perpendicular to the lower surface 39 and the return laserpulses are received by the corresponding distance measuring device 302.For example, in another embodiment, three distance measuring devices 302are placed on the lower surface 39, each separated at 120° angularseparation from an adjacent distance measuring device 302.

FIG. 4 illustrates the setup with the substrate 38 placed in the cup 36and the cone 34 positioned over the cup 36 prior to closing theclamshell. As illustrated, a plurality of distance measuring devices 302(similar to FIG. 3) are installed on the lower surface 39 of the cone34. After the substrate 38 has been placed in the cup 36, the cone 34 ispositioned over the cup 36 to check the inclination of the substrate 38to determine whether the substrate 38 is positioned substantiallyhorizontal in the cup 36. In order to check the inclination, thedistance measuring devices 302 emit laser pulses 303 towards thesubstrate 38. In an embodiment, the distance measuring devices 302 emitthe laser pulses sequentially or in a desired order. In anotherembodiment, the plurality of distance measuring devices 302 emit thelaser pulses simultaneously or near simultaneously (having very smalldelay between laser pulses generated by the distance measuring devices).For the sake of discussion, embodiments disclosed consider that themeasurements using the distance measuring devices 302 are performed whenthe substrate 38 is outside the plating solution 31. However,embodiments are not limited in this regard. In other embodiments, themeasurements using the distance measuring devices 302 can also beperformed when the substrate 38 is immersed in the plating solution 31and/or while electroplating operations are being performed on thesubstrate 38, without departing from the spirit and scope of thedisclosure.

Each distance measuring device 302 emits the respective laser pulse 303towards the substrate 38. The laser pulse is generated when opticalenergy (light) from the distance measuring device 302 is emitted not incontinuous mode, but in short bursts (pulses) of some duration at somerepetition rate. For the purposes of discussion, it is assumed that eachdistance measuring device 302 emits a single laser pulse 303, receivesthe reflected laser pulse 307 from the substrate 38, and calculates theturnaround time (TAT) and distance (discussed below) before emitting thenext laser pulse. In an example, this can be achieved by increasing therepetition rate between two successive pulses or by stopping pulsegeneration by the distance measuring device 302 after a single laserpulse has been emitted. However, in other embodiments, the distancemeasuring devices 302 can emit a series of pulses and performmeasurements based on the series of pulses reflected from the substrate38.

The laser pulse 303 strikes (impinges upon) the back side (top surface)305 of substrate 38 and is reflected back (reflected pulse 307) to thedistance measuring device 302. The distance measuring device 302calculates the time it takes for the reflected laser pulse 307 to bereceived. This time, also referred to as turnaround time (TAT), iscalculated by measuring the duration from the time the laser pulse 303is emitted by the distance measuring device 302 and the time thereflected laser pulse 307 is received by the distance measuring device302. In other embodiments, the distance measuring device 302 transmits afirst signal (command) to an external controller (e.g., computing system500, FIGS. 5A and 5B) when the laser pulse 303 has been emitted and asecond signal (command) when the reflected laser pulse 307 has beenreceived. When the first signal is received, the controller starts atimer and when the second signal is received, the controller stops thetimer. The turnaround time is thereby obtained using the timer. Itshould be noted that the reflected laser pulse 307 and the laser pulse303 are substantially the same laser pulse. The different labels areprovided for the sake of explanation to differentiate between an emitted(transmitted) laser pulse and a reflected laser pulse.

In some embodiments, based on the respectively calculated turnaroundtimes, each distance measuring device 302 calculates a correspondingdistance between the distance measuring device 302 and the substrate 38.The logic (software or hardware) for calculating the distance from theturnaround time is included in the distance measuring device 302, andthe distance measuring device 302 provides the calculated distance tothe controller for indicating (e.g., displaying on a display 504, FIG.5A) the same to the operator. In other embodiments, the logic (softwareor circuit) for calculating the distance from the turnaround time isincluded in the controller 500. In this case, the distance measuringdevices 302 transmit the turnaround time to the controller 500 and thecontroller 500 provides the operator with the calculated distance.

Differences between the distances calculated by the distance measuringdevices 302 is calculated. If the difference is substantially zero(+/−0.5 mm) or within a desired threshold value, then it is determinedthat the substrate 38 is horizontal. However, if the difference is notsubstantially zero or is not within a desired threshold value, then itis determined that the substrate 38 is not horizontal.

Depending on the distances measured by the distance measuring devices302, a direction of the inclination (e.g., tilt) can be determined. Inother words, it can be determined, which portion (end) of the substrate38 is lower than the other portions of the substrate 38. Alternatively,it can be determined which portion of the substrate 38 is higher thanthe other portions of the substrate 38. For example, referring to FIG.4, if the distance (referred to DIST1, for example) between distancemeasuring device 302-1 and the substrate 38 is larger than the distance(referred to DIST3, for example) between distance measuring device 302-3and the substrate 38, then it can be determined that the portion of thesubstrate 38 below the distance measuring device 302-3 is positionedhigher than the portion of the substrate 38 below the distance measuringdevice 302-1. In other words, the substrate 38 is sloping downward fromthe distance measuring device 302-3 to the distance measuring device302-1. To reposition the substrate 38, the robotic arm engages thesubstrate 38 to lift the substrate 38, and repositions the substrate 38such that the portion of the substrate 38 below the distance measuringdevice 302-1 is higher than the portion of the substrate 38 below thedistance measuring device 302-3. The distances from the distancemeasuring devices 302 and the repositioned substrate 38 are measuredagain to determine whether the substrate 38 is substantially horizontal.

In some embodiments, each distance measuring device 302 is alsoprogrammed (via software or hardware circuit) or otherwise configured toimplement a timeout condition in which each distance measuring device302 waits for a certain amount of time to receive the reflected laserpulse 307. If the reflected laser pulse 307 is not received with theamount of time (i.e., the time limit is exceeded), a timeout is declaredand the operator is notified (e.g., a notification on a display 504 inFIG. 5A). The timeout may indicate that the substrate 38 is severelyinclined such that the reflected laser pulse 307 does not bounce back tothe distance measuring device 302 from which it was emitted. This may beindicative that the robotic arm has malfunctioned and is incapable ofhandling the substrate as intended. The operator can then perform thenecessary remedial actions on the robotic arm. Alternatively, it may beindicative of other apparatus malfunctions or other errors, and thenecessary remedial actions are performed. After the appropriatecorrective action has been taken, the process to determine whether thesubstrate 38 is horizontal is repeated. Once it is determined that thesubstrate 38 is substantially horizontally positioned in the cup 36, thecone 34 is closed and the plating operation begins.

FIG. 5A is a schematic view of a computer system that operates as acontroller for controlling operations of the distance measuring devices302, calculates the distances from the turnaround times, and/or controlthe plating operations. The foregoing embodiments may be realized usingcomputer hardware and computer programs executed thereon. In FIG. 5A, acomputer system 500 is provided with a computer 501 including an opticaldisk read only memory (e.g., CD-ROM or DVD-ROM) drive 505 and a magneticdisk drive 506, a keyboard 502, a mouse 503, and a display 504.

FIG. 5B is a diagram showing an internal configuration of the computersystem 500. In FIG. 5B, the computer 501 is provided with, in additionto the optical disk drive 505 and the magnetic disk drive 506, one ormore processors 511, such as a micro processing unit (MPU), a ROM 512 inwhich a program such as a boot up program is stored, a random accessmemory (RAM) 513 that is connected to the MPU 511 and in which a commandof an application program is temporarily stored and a temporary storagearea is provided, a hard disk 514 in which an application program, asystem program, and data are stored, and a bus 515 that connects the MPU511, the ROM 512, and the like. Note that the computer 501 may include anetwork card (not shown) for providing a connection to a LAN.

The program for causing the computer system 500 to execute theoperations discussed in the foregoing embodiments may be stored in anoptical disk 521 or a magnetic disk 522, which are inserted into theoptical disk drive 505 or the magnetic disk drive 506, and betransmitted to the hard disk 514. Alternatively, the program may betransmitted via a network (not shown) to the computer 501 and stored inthe hard disk 514. At the time of execution, the program is loaded intothe RAM 513. The program may be loaded from the optical disk 521 or themagnetic disk 522, or directly from a network.

In the programs, the functions realized by the programs do not includefunctions that can be realized only by hardware in some embodiments. Forexample, functions that can be realized only by hardware, such as anetwork interface, in an acquiring unit that acquires information or anoutput unit that outputs information are not included in the functionsrealized by the above-described programs. Furthermore, a computer thatexecutes the programs may be a single computer or may be multiplecomputers.

In some embodiments, the distance measurement using lasers is performedby using a laser interferometer technique. In other embodiments, thedistance measurement is performed by using ultrasound, sonar, echosounding, etc. In still other embodiments, the distance measurement isperformed using Doppler devices that measure the distance using Dopplertechnique, magnetic sensors (magnetic encoders), rotary encoders, etc.

In some embodiments, the distance measurement is performed even afterthe clamshell is closed. In such a case, the distance measurement isalso performed during an electroplating process and the position of thesubstrate may be adjusted during the electroplating process to maintainparallel position with respect to the surface of the plating solution.In other embodiments, when the inclination of substrate exceeds athreshold, an alarm is output. In still other embodiments, if theinclination of the substrate exceeds a threshold during a platingoperation, an alarm is output.

Embodiments of the present disclosure are directed to ensuring that thesubstrate placed in the clamshell for performing the plating operationis substantially horizontal in the cup of the clamshell. This improvesthe plating of the substrate and limits the plating solution fromcontacting the backside of the substrate.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

According to one aspect of the present disclosure, an apparatus includesa cup configured to support a substrate; and a cone including at leastthree distance measuring devices arranged on a lower surface thereof andfacing the substrate. Each distance measuring device is configured totransmit a laser pulse towards the substrate, the laser pulse impingingthe substrate, receive a reflected laser pulse from the substrate,calculate a turnaround time of the laser pulse, and calculate a distancebetween the distance measuring device and the substrate using theturnaround time for determining an inclination of the substrate. In anembodiment, the distance measuring devices transmit the laser pulsessimultaneously. In an embodiment, the distance measuring devicestransmit the laser pulses at different times. In an embodiment, thedistance measuring devices transmit the laser pulses sequentially. In anembodiment, the distance measuring devices are directly above thesubstrate. In an embodiment, the distance measuring device is configuredto calculate the distance between the distance measuring device and thesubstrate for determining whether the substrate is placed substantiallyhorizontal in the cone.

According to another aspect of the present disclosure, a method includesplacing a substrate in a cup of a substrate holder; positioning a coneover the substrate, a cone including at least three distance measuringdevices arranged on a lower surface thereof and facing the substrate;transmitting laser pulses using each of the at least three distancemeasuring devices towards the substrate, the laser pulses impinging thesubstrate; receiving reflected laser pulses from the substrate at eachof the at least three distance measuring devices; calculating aturnaround time for each laser pulse using a corresponding distancemeasuring device; calculating, using the corresponding distancemeasuring device, a distance between the distance measuring device andthe substrate, the distance being calculated using the turnaround time;and determining an inclination of the substrate. In an embodiment,determining the inclination of the substrate includes determiningwhether the substrate is substantially horizontal. In an embodiment, themethod further includes repositioning the substrate when it isdetermined that the substrate is not substantially horizontal. In anembodiment, the method further includes determining the inclination ofthe substrate after repositioning the substrate. In an embodiment, themethod further includes performing a plating operation on the substrateafter determining the inclination of the substrate. In an embodiment,the distance measuring devices transmit the laser pulses simultaneously.In an embodiment, wherein the distance measuring devices transmit thelaser pulses at different times. In an embodiment, wherein the distancemeasuring devices transmit the laser pulses sequentially. In anembodiment, wherein positioning the cone over the substrate comprisespositioning the cone over the substrate such that the at least threedistance measuring devices are directly above the substrate.

According to an aspect of the present disclosure, a system forelectrochemically plating a substrate includes an electroplating cellcontaining an plating solution for electrochemically depositing a metalon the substrate; a substrate holder configured to holding the substratein the plating solution; an anode immersed in the plating solution; anda power supply electrically coupled between the anode and the substrateholder. The substrate holder includes a cup configured to hold thesubstrate, and a cone including a plurality of distance measuringdevices arranged on a lower surface thereof and facing the substrate,and having an equal angular separation from each other. Each distancemeasuring device is configured to transmit a laser pulse towards thesubstrate, the laser pulse impinging the substrate, receive a reflectedlaser pulse from the substrate, calculate a turnaround time of the laserpulse, and calculate a distance between the distance measuring deviceand the substrate using the turnaround time for determining aninclination of the substrate. In an embodiment, wherein each distancemeasuring device is configured to calculate the distance to determinewhether the substrate is substantially horizontal. In an embodiment,wherein the cone is positioned over the substrate such that theplurality of distance measuring devices are directly above thesubstrate. In an embodiment, the system further includes a controllerprogrammed to determine the inclination of the substrate using thedistance calculated using the plurality of distance measuring devices.In an embodiment, the controller is programmed to perform a platingoperation on the substrate after determining that the substrate issubstantially horizontal.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

1-6. (canceled)
 7. A method, comprising: placing a substrate in a cup ofa substrate holder; positioning a cone over the substrate, the coneincluding at least three distance measuring devices arranged on a lowersurface thereof and facing the substrate; transmitting laser pulsesusing each of the at least three distance measuring devices towards thesubstrate, the laser pulses impinging the substrate; receiving reflectedlaser pulses from the substrate at each of the at least three distancemeasuring devices; calculating a turnaround time for each laser pulseusing a corresponding distance measuring device; calculating, using thecorresponding distance measuring device, a distance between the distancemeasuring device and the substrate, the distance being calculated usingthe turnaround time; and determining an inclination of the substrate. 8.The method of claim 7, wherein determining the inclination of thesubstrate includes determining whether the substrate is substantiallyhorizontal.
 9. The method of claim 8, further comprising repositioningthe substrate when it is determined that the substrate is notsubstantially horizontal.
 10. The method of claim 9, further comprisingdetermining the inclination of the substrate after repositioning thesubstrate.
 11. The method of claim 7, further comprising performing aplating operation on the substrate after determining the inclination ofthe substrate.
 12. The method of claim 7, wherein the at least threedistance measuring devices transmit the laser pulses simultaneously. 13.The method of claim 7, wherein the at least three distance measuringdevices transmit the laser pulses at different times.
 14. The method ofclaim 7, wherein the distance measuring devices transmit the laserpulses sequentially.
 15. The method of claim 7, wherein positioning thecone over the substrate comprises positioning the cone over thesubstrate such that the at least three distance measuring devices aredirectly above the substrate. 16-20. (canceled) 21-27. (canceled) 28-31.(canceled)
 32. A method, comprising: placing a substrate in a cup of asubstrate holder; positioning a cone over the substrate, the coneincluding at least three distance measuring devices arranged on a lowersurface thereof and facing the substrate; transmitting a laser pulsefrom each distance measuring device towards a back side of thesubstrate; receiving a reflected laser pulse from the substrate at eachdistance measuring device; calculating, using the corresponding distancemeasuring device, a time difference between the transmitting the laserpulse and receiving the reflected laser pulse; determining that thesubstrate is inclined when time differences obtained from two or moredistance measuring device are each greater than a threshold value; andrepositioning the substrate in the cup.
 33. The method of claim 32,further comprising: recalculating the time differences between thetransmitting the laser pulse and receiving the reflected laser pulseafter repositioning the substrate.
 34. The method of claim 32, furthercomprising: determining presence of a desired seal between the substrateand the cup when the time differences obtained from the two or moredistance measuring device are each less than the threshold value. 35.The method of claim 34, further comprising: depositing a metal on thesubstrate.
 36. The method of claim 32, wherein the distance measuringdevices transmit the laser pulses simultaneously.
 37. The method ofclaim 32, wherein the distance measuring devices transmit the laserpulses at different times.
 38. The method of claim 32, wherein thedistance measuring devices transmit the laser pulses sequentially.
 39. Amethod of electroplating a substrate, comprising: placing a substrate ina substrate holder, the substrate holder including: a cup configured tohold the substrate, and a cone including a plurality of distancemeasuring devices arranged on a lower surface thereof at an equalangular separation from each other, wherein distance measuring device islocated directly opposite an upper surface of the substrate; impingingthe upper surface of the substrate with a laser pulse transmitted fromeach distance measuring device; receiving a reflected laser pulse fromthe substrate at the corresponding distance measuring device;determining an inclination of the substrate based on the reflected laserpulse; and processing the substrate when the substrate is at a desiredinclination angle.
 40. The method of claim 39, wherein the processingincludes contacting the substrate with a plating solution when theinclination of the substrate is within a desired range of inclinationvalues.
 41. The method of claim 39, wherein determining the inclinationincludes determining whether the substrate is substantially horizontal.42. The method of claim 39, further comprising: separating the cup fromthe cone; placing the substrate on the cup; and placing the cone on thecup and over the substrate such that the plurality of distance measuringdevices are directly opposite the substrate.